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  to learn more about on semiconductor, please visit our website at www.onsemi.com please note: as part of the fairchild semiconductor integration, some of the fairchild orderable part numbers will need to change in order to meet on semiconductors system requirements. since the on semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the fairchild part numbers will be changed to a dash (-). this document may contain device numbers with an underscore (_). please check the on semiconductor website to verify the updated device numbers. the most current and up-to-date ordering information can be found at www.onsemi.com . please email any questions regarding the system integration to fairchild_questions@onsemi.com . is now part of on semiconductor and the on semiconductor logo are trademarks of semico nductor components industries, llc dba on semiconductor or its subsid iaries in the united states and/or other countries. on semiconductor ow ns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellec tual property. a listing of on semiconductor?s product/patent cover age may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semicon ductor makes no warranty, representation or guarantee regarding the s uitability of its products for any particular purpose, nor does on semico nductor assume any liability arising out of the application or use of any product or circuit, and speci?ca lly disclaims any and all liability, including without limitation spe cial, consequential or incidental damages. buyer is responsible for i ts products and applications using on semiconductor products, including compliance with all laws, regul ations and safety requirements or standards, regardless of any suppor t or applications information provided by on semiconductor. ?typica l? parameters which may be provided in on semiconductor data sheets and/or speci?cations can and do vary in diffe rent applications and actual performance may vary over time. all operat ing parameters, including ?typicals? must be validated for each custo mer application by customer?s technical experts. on semiconductor does not convey any license und er its patent rights nor the rights of others. on semiconductor products a re not designed, intended, or authorized for use as a critical compone nt in life support systems or any fda class 3 medical devices or medical devices with a same or similar classi?ca tion in a foreign jurisdiction or any devices intended for implantation i n the human body. should buyer purchase or use on semiconductor products fo r any such unintended or unauthorized application, buyer shall indemnify and hold on semico nductor and its of?cers, employees, subsidiaries, af?liates, and di stributors harmless against all claims, costs, damages, and expense s, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associa ted with such unintended or unauthorized use, even if such claim alleges th at on semiconductor was negligent regarding the design or manufacture o f the part. on semiconductor is an equal opportunity/af?rmative action employer. this literatu re is subject to all applicable copyright laws and is not for resale in any manne r.
september 2015 ? 2015 fairchild semiconductor corporation www.fairchildsemi.com FL73282 ? rev. 1.0 FL73282 half-bridge gate driver fl 73282 half-bridge gate driver features ? floating channel for bootstrap operation to +900 v ? typically 350 ma / 65 0 ma sourcing/sinking current driving capability for both channels ? common-mode dv/dt noise canceling circuit ? extended allowable negative v s swing to -9.8 v for signal propagation at v cc =v bs =15 v ? v cc & v bs supply range from 10 v to 20 v ? uvlo functions for both channels ? matched propagation delay below 50 ns ? built-in 170 ns dead-time ? output in phase with input signal applications ? fluorescent lamp ballast ? hid ballast ? smps ? motor driver ? general purpose half bridge topology description the fl 73 282, a monolithic half bridge gate-drive ic, can drive mosfets and igbts that operate up to +9 00 v. fairchilds high -voltage process and common mode noise canceling technique provides stable operation o f th e high-side driver under high-dv s /dt noise circumstances. an advanced level-shift circuit allows high -side gate driver operation up to v s =-9.8 v (typical) for v bs =15 v. the uvlo circuits for both channels prevent malfunction when v cc or v bs is lower than the specified threshold voltage. output drivers typically source/sink 350 ma / 650 ma, respectively, which is suitable for all kinds of half- and full-bridge inverters. figure 1. sop 8 ordering information part number operating temperature range package packing method FL73282 mx (1) - 40 c to + 125 c 8- lead , small outline integrated circuit, (soic) t ape & r eel note: 1. these devices passed wave-soldering test by jesd22a-111.
? 20 15 fairchild semiconductor corporation www.fairchildsemi.com FL73282 ? rev. 1.0 FL73282 half-bridge gate driver typical application diagram d boot lin c boot 15v r boot q1 r1 r2 v b com ho v s lo 1 2 lin v cc 5 6 8 3 4 7 r3 r4 up to 900v q2 hin load c1 hin figure 2. application circuit for half bridge topology internal block diagram uvlo driver pulse generator 3 1 4 8 6 v cc com lo v b ho v s r rs q driver hs(on/off) ls(on/off) delay uvlo 2 hin lin schmitt trigger input shoot through prevention {dead-time=170ns} noise canceller 5 7 figure 3. functional block diagram
? 2015 fairchild semiconductor corporation www.fairchildsemi.com FL73282 ? rev. 1.0 3 FL73282 half-bridge gate driver pin configuration v s v b v cc lin hin ho lo 4 com 3 2 1 5 6 7 8 FL73282 figure 4. pin assignments (top view) pin definitions pin name i/o description 1 v cc i low -side supply voltage 2 hin i logic input for high-side gate driver output 3 lin i logic input for low-side gate driver output 4 com logic ground and low-side driver return 5 lo o low -side driver output 6 v s i high-voltage floating supply return 7 ho o high-side driver output 8 v b i high-side floating supply
? 2015 fairchild semiconductor corporation www.fairchildsemi.com FL73282 ? rev. 1.0 4 FL73282 half-bridge gate driver absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be operable above the recommended operating conditions and stre ssing the parts to these levels is not recommended. in addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. symb ol parameter min. max. unit v s high-side floating offset voltage v b -24 v b +0.3 v v b high-side floating supply voltage -0.3 924 .0 v v cc low -side and logic-fixed supply voltage -0.3 24 v v ho high-side floating output voltage v ho v s -0.3 v b +0.3 v v lo low -side floating output voltage v lo -0.3 v cc +0.3 v v in logic input voltage (hin, lin) -0.3 v cc +0.3 v com logic ground v cc -24 v cc +0.3 v dv s /dt allowable offset voltage slew rate 50 v/ns p d (3 )( 4)(5) power dissipation 0.625 w ja thermal resistance 200 c/w t j junction temperature 150 c t stg storage temperature - 55 150 c notes: 2. mounted on 76.2 x 114.3 x 1.6 mm pcb (fr-4 glass epoxy material). 3. refer to the following standards: jesd51-2: integral circuits thermal test method environmental conditions, natural convec tion; jesd51-3: low effective thermal conductivity test board for leaded surfa ce-mount packages. 4. do not exceed maximum power dissipation (p d ) under any circumstances. recommended operating conditions the recommended operating conditions table defines the condi tions for actual device operation. recommended operating conditions are specified to ensure optimal perfo rmance to the datasheet specifications. fairchild does not recommend exceeding them or designing to absolute maximum rating s. symbol parameter min. max. unit v b high-side floating supply voltage v s +10 v s +20 v v s high-side floating supply offset voltage 6-v cc 900 v v ho high-side (ho) output voltage v s v b v v lo low -s ide (lo) output voltage com v cc v v in logic input voltage (hin, lin) com v cc v v cc low -side supply voltage 10 20 v t a ambient temperature - 40 +125 c
? 2015 fairchild semiconductor corporation www.fairchildsemi.com FL73282 ? rev. 1.0 5 FL73282 half-bridge gate driver static electrical characteristics v bias (v cc , v bs ) = 15.0 v, t a = 25c, unless otherwise specified. the v in and i in parameters are referenced to com. the v o and i o parameters are referenced to v s and com and are applicable to the respective outputs ho and lo. symbol parameter condition min. typ. max. unit power supply section i qcc quiescent v cc supply current v in =0 v or 5 v 80 180 ? a i qbs quiescent v bs supply current v in =0 v or 5 v 50 120 ? a i pcc operating v cc supply current f in =20 khz, rms value 550 ? a ? i pbs operating v bs supply current f in =20 khz, rms value 600 ? a i lk offset supply leakage current v b =v s =9 00 v 10 ? a bootstrapped supply section v ccuv+ v bsuv+ v cc & v bs supply u nder -voltage positive going threshold 8.2 9.2 10.0 v v ccuv - v bsuv- v cc & v bs supply u nder -voltage negative going threshold 7.6 8.7 9.6 v v ccuvh v bsuvh v cc supply u nder -voltage lockout hysteresis 0. 5 v i nput section v ih logic "1" input voltage 2. 5 v v il logic "0" input voltage 0.8 v i in+ logic "1" input bias current v in =5 v 20 50 ? a ? i in - logic "0" input bias current v in =0 v 1.0 2.0 ? a ? r in logic input pull-down resistance 100 250 k ? gate driver output section ? v oh high-level output voltage, v bias -v o i o =0 a 85 mv v ol low -level output voltage, v o i o =0 a 85 mv i o+ output high short-circuit pulsed current v o =0 v,v in =5 v with pw 10 s 250 350 ma i o- output low short-circuit pulsed current v o =15 v,v in =0 v with pw 10 s 500 650 ma v s allowable negative v s pin voltage for hin signal propagation to ho -9 .8 -7 .0 v
? 2015 fairchild semiconductor corporation www.fairchildsemi.com FL73282 ? rev. 1.0 6 FL73282 half-bridge gate driver dynamic electrical characteristics v bias (v cc , v bs ) = 15.0 v, v s = com, c l = 1000 pf and t a = 25 c , unless otherwise specified.. symbol parameter conditions min. typ. max. unit t on turn-on propagation delay v s =0 v 80 150 220 ns t off turn-off propagation delay v s =0 v or 9 00 v (5) 80 150 220 ns t r turn-on rise time v lin =v hin =5 v 60 140 ns t f turn-off fall time v lin =v hin =0 v 30 80 ns dt dead time 70 170 270 ns mt delay matching , hs & ls turn-on/off 50 ns t pw minimum input pulse width that changes the output (5)(6) 220 ns notes : 5. these parameters are guaranteed by design. 6. the minimum input pulse width time included dead time
? 2015 fairchild semiconductor corporation www.fairchildsemi.com FL73282 ? rev. 1.0 7 FL73282 half-bridge gate driver typical characteristics t u r n - o n p r o p a g a t i o n d e l a y [ n s e c ] 1 6 0 1 4 0 1 2 0 1 0 0 8 0 s u p p l y v o l t a g e [ v ] 1 8 0 h i g h - s i d e l o w - s i d e v c c = v b s c o m = 0 v c l = 1 n f t a = 2 5 1 0 1 2 1 4 1 6 1 8 2 0 t u r n - o n p r o p a g a t i o n d e l a y [ n s e c ] 2 5 0 2 0 0 1 5 0 1 0 0 5 0 - 4 0 - 2 0 0 2 0 4 0 6 0 t e m p e r a t u r e [ ] 8 0 1 0 0 1 2 0 3 0 0 h i g h - s i d e l o w - s i d e v c c = v b s = 1 5 v c o m = 0 v c l = 1 n f 2 2 5 1 7 5 1 2 5 7 5 2 7 5 figure 5. turn-on propagation delay vs. supply voltage figure 6. turn-on propagation delay vs. temperature t u r n - o f f p r o p a g a t i o n d e l a y [ n s e c ] s u p p l y v o l t a g e [ v ] 1 8 0 1 6 0 1 4 0 1 2 0 1 0 0 2 0 0 h i g h - s i d e l o w - s i d e v c c = v b s c o m = 0 v c l = 1 n f t a = 2 5 1 0 1 2 1 4 1 6 1 8 2 0 t u r n - o f f p r o p a g a t i o n d e l a y [ n s e c ] 2 5 0 2 2 5 2 0 0 1 7 5 1 5 0 1 2 5 1 0 0 5 0 - 4 0 - 2 0 0 2 0 4 0 6 0 t e m p e r a t u r e [ ] 8 0 1 0 0 1 2 0 7 5 3 0 0 2 7 5 h i g h - s i d e l o w - s i d e v c c = v b s = 1 5 v c o m = 0 v c l = 1 n f figure 7. turn-off propagation delay vs. supply voltage figure 8. turn-off propagation delay vs. temperature t u r n - o n r i s i n g t i m e [ n s e c ] s u p p l y v o l t a g e [ v ] 8 0 7 0 6 0 5 0 4 0 3 0 2 0 0 1 0 1 0 0 9 0 h i g h - s i d e l o w - s i d e 1 0 1 2 1 4 1 6 1 8 2 0 v c c = v b s = 1 5 v c o m = 0 v c l = 1 n f t a = 2 5 t u r n - o n r i s i n g t i m e [ n s e c ] 6 0 5 0 4 0 2 0 0 - 4 0 - 2 0 0 2 0 4 0 6 0 t e m p e r a t u r e [ ] 8 0 1 0 0 1 2 0 8 0 h i g h - s i d e l o w - s i d e 3 0 1 0 7 0 v c c = v b s = 1 5 v c o m = 0 v c l = 1 n f figure 9. turn-on rising time vs. supply voltage figure 10. turn-on rising time vs. temperature
? 2015 fairchild semiconductor corporation www.fairchildsemi.com FL73282 ? rev. 1.0 8 FL73282 half-bridge gate driver typical characteristics (continued) t u r n - o f f f a l l i n g t i m e [ n s e c ] 8 0 7 0 6 0 5 0 4 0 3 0 2 0 0 s u p p l y v o l t a g e [ v ] 1 0 h i g h - s i d e l o w - s i d e 1 0 1 2 1 4 1 6 1 8 2 0 v c c = v b s c o m = 0 v c l = 1 n f t a = 2 5 t u r n - o f f f a l l i n g t i m e [ n s e c ] t e m p e r a t u r e [ ] 6 0 5 0 4 0 2 0 0 - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 8 0 h i g h - s i d e l o w - s i d e 3 0 1 0 7 0 v c c = v b s = 1 5 v c o m = 0 v c l = 1 n f figure 11. turn-off falling time vs. supply voltage figure 12. turn-off falling vs. temperature o u t p u t s o u r c i n g c u r r e n t [ m a ] 6 0 0 5 5 0 5 0 0 4 5 0 4 0 0 3 5 0 3 0 0 2 0 0 1 0 1 2 1 4 1 6 s u p p l y v o l t a g e [ v ] 1 8 2 0 2 5 0 7 0 0 6 5 0 h i g h - s i d e l o w - s i d e v c c = v b s c o m = 0 v l o = h o = 0 v t a = 2 5 o u t p u t s o u r c i n g c u r r e n t [ m a ] 5 0 0 4 8 0 4 6 0 4 4 0 4 2 0 4 0 0 3 8 0 3 4 0 - 4 0 - 2 0 0 2 0 4 0 6 0 t e m p e r a t u r e [ ] 8 0 1 0 0 1 2 0 3 6 0 3 2 0 5 2 0 h i g h - s i d e l o w - s i d e v c c = v b s = 1 5 v c o m = 0 v l o = h o = 0 v figure 13. output sourcing current vs. supply voltage figure 14. output sourcing current vs. temperature o u t p u t s i n k i n g c u r r e n t [ m a ] 9 0 0 8 0 0 7 0 0 5 0 0 3 0 0 s u p p l y v o l t a g e [ v ] 1 1 0 0 h i g h - s i d e l o w - s i d e 6 0 0 4 0 0 1 0 0 0 1 0 1 2 1 4 1 6 1 8 2 0 v c c = v b s c o m = 0 v l o = v c c , h o = v b t a = 2 5 o u t p u t s i n k i n g c u r r e n t [ m a ] 8 6 0 8 0 0 7 4 0 6 2 0 5 0 0 - 4 0 - 2 0 0 2 0 4 0 6 0 t e m p e r a t u r e [ ] 8 0 1 0 0 1 2 0 9 8 0 h i g h - s i d e l o w - s i d e 6 8 0 5 6 0 9 2 0 v c c = v b s = 1 5 v c o m = 0 v l o = v c c , h o = v b figure 15. output sinking current vs. supply voltage figure 16. output sinking current vs. temperature
? 2015 fairchild semiconductor corporation www.fairchildsemi.com FL73282 ? rev. 1.0 9 FL73282 half-bridge gate driver typical characteristics (continued) a l l o w a b l e n e g a t i v e v s v o l t a g e f o r s i g n a l p r o p a g a t i o n t o h i g h - s i d e [ v ] - 2 - 4 - 6 - 8 - 1 0 - 1 2 - 1 4 - 1 8 s u p p l y v o l t a g e [ v ] - 1 6 1 0 1 2 1 4 1 6 1 8 2 0 v c c = v b s c o m = 0 v t a = 2 5 a l l o w a b l e n e g a t i v e v s v o l t a g e f o r s i g n a l p r o p a g a t i o n t o h i g h - s i d e [ v ] - 8 - 9 - 1 0 - 1 1 - 1 2 - 1 3 - 1 5 - 4 0 - 2 0 0 2 0 4 0 6 0 t e m p e r a t u r e [ ] 8 0 1 0 0 1 2 0 - 1 4 v c c = v b s = 1 5 v c o m = 0 v figure 17. allowable negative v s voltage for signal propagation to high side vs. supply voltage figure 18. allowable negative v s voltage for signal propagation to high side vs. temperature i q c c [ u a ] s u p p l y v o l t a g e [ v ] 1 0 1 2 1 4 1 6 1 8 2 0 v b s = 1 5 v c o m = 0 v h i n = l i n = 0 v t a = 2 5 8 0 7 0 6 0 5 0 4 0 3 0 2 0 0 1 0 1 0 0 9 0 i q c c [ u a ] 8 5 7 5 6 5 5 5 4 5 - 4 0 - 2 0 0 2 0 4 0 6 0 t e m p e r a t u r e [ ] 8 0 1 0 0 1 2 0 9 5 v c c = v b s = 1 5 v c o m = 0 v h i n = l i n = 0 v 8 0 7 0 6 0 5 0 9 0 figure 19. i qcc vs. supply voltage figure 20. i qcc vs. temperature i q b s [ u a ] 1 0 1 2 1 4 1 6 s u p p l y v o l t a g e [ v ] 1 8 2 0 v b s = 1 5 v c o m = 0 v h i n = l i n = 0 v t a = 2 5 8 0 7 0 6 0 5 0 4 0 3 0 2 0 0 1 0 1 0 0 9 0 i q b s [ u a ] 6 0 5 5 5 0 4 5 4 0 3 5 3 0 2 0 - 4 0 - 2 0 0 2 0 4 0 6 0 t e m p e r a t u r e [ ] 8 0 1 0 0 1 2 0 2 5 7 0 6 5 v c c = v b s = 1 5 v c o m = 0 v h i n = l i n = 0 v figure 21. i qbs vs. supply voltage figure 22. i qbs vs. temperature
? 2015 fairchild semiconductor corporation www.fairchildsemi.com FL73282 ? rev. 1.0 10 FL73282 half-bridge gate driver typical characteristics (continued) v o h [ v ] 0 . 6 0 . 5 0 . 4 0 . 2 0 . 0 s u p p l y v o l t a g e [ v ] h i g h - s i d e l o w - s i d e 0 . 3 0 . 1 1 0 1 2 1 4 1 6 1 8 2 0 v c c = v b s c o m = 0 v h i n = l i n = 5 v i l = 2 0 m a t a = 2 5 0 . 7 v o h [ m v ] 5 0 4 0 3 0 1 0 - 1 0 - 4 0 - 2 0 0 2 0 4 0 6 0 t e m p e r a t u r e [ ] 8 0 1 0 0 1 2 0 7 0 h i g h - s i d e l o w - s i d e 2 0 0 6 0 v c c = v b s = 1 5 v c o m = 0 v h i n = l i n = 5 v i l = 0 a figure 23. high-level output voltage vs. supply voltage figure 24. high-level output voltage vs. temperature v o l [ v ] 0 . 2 2 0 . 2 0 0 . 1 8 0 . 1 6 0 . 1 4 0 . 1 2 0 . 1 0 0 . 0 6 s u p p l y v o l t a g e [ v ] 0 . 0 8 0 . 2 6 0 . 2 4 h i g h - s i d e l o w - s i d e 1 0 1 2 1 4 1 6 1 8 2 0 v c c = v b s c o m = 0 v h i n = l i n = 0 v i l = 2 0 m a t a = 2 5 5 0 4 0 3 0 1 0 - 1 0 - 4 0 - 2 0 0 2 0 4 0 6 0 t e m p e r a t u r e [ ] 8 0 1 0 0 1 2 0 7 0 2 0 0 6 0 v o l [ m v ] h i g h - s i d e l o w - s i d e v c c = v b s = 1 5 v c o m = 0 v h i n = l i n = 0 v i l = 0 a figure 25. low-level output voltage vs. supply voltage figure 26. low-level output voltage vs. temperature i n + / i n - [ u a ] s u p p l y v o l t a g e [ v ] i n + i n - 8 0 7 0 6 0 5 0 4 0 3 0 2 0 0 1 0 1 0 0 9 0 0 5 1 0 1 5 2 0 v c c = v b s c o m = 0 v i n = v c c o r i n = 0 v t a = 2 5 i n + [ u a ] 4 0 3 0 2 0 1 0 0 - 4 0 - 2 0 0 2 0 4 0 6 0 t e m p e r a t u r e [ ] 8 0 1 0 0 1 2 0 h i n l i n h i n = l i n = 5 v figure 27. input bias current vs. supply voltage figure 28. input bias current vs. temperature
? 2015 fairchild semiconductor corporation www.fairchildsemi.com FL73282 ? rev. 1.0 11 FL73282 half-bridge gate driver typical characteristics (continued) v c c u v + / v o c c u v - [ v ] 9 . 6 9 . 4 9 . 2 9 . 0 8 . 8 8 . 6 8 . 4 8 . 0 t e m p e r a t u r e [ ] 8 . 2 1 0 . 0 9 . 8 v o c c u v + v o c c u v - - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 v s b u v + / v s b c u v - [ v ] 9 . 4 9 . 2 9 . 0 8 . 8 8 . 6 8 . 4 8 . 2 7 . 8 - 4 0 - 2 0 0 2 0 4 0 6 0 t e m p e r a t u r e [ ] 8 0 1 0 0 1 2 0 8 . 0 9 . 8 9 . 6 v s b u v + v s b u v - figure 29. v cc uvlo threshold voltage vs. temperature figure 30. v bs uvlo threshold voltage vs. temperature i l k [ u a ] 5 0 4 0 2 0 0 t e m p e r a t u r e [ ] 3 0 1 0 - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 v b t o - c o m = 9 2 5 v i n p u t l o g i c t h r e s h o l d v o l t a g e [ v ] 2 . 0 1 . 8 1 . 6 1 . 2 0 . 8 - 4 0 - 2 0 0 2 0 4 0 6 0 t e m p e r a t u r e [ ] 8 0 1 0 0 1 2 0 2 . 4 v i l ( h i n ) v i l ( l i n ) 1 . 4 1 . 0 2 . 2 v c c = v b s = 1 5 v c o m = 0 v v i h ( h i n ) v i h ( l i n ) figure 31. v b to com leakage current vs. temperature figure 32. input logic threshold voltage vs. temperature
? 2015 fairchild semiconductor corporation www.fairchildsemi.com FL73282 ? rev. 1.0 12 FL73282 half-bridge gate driver switching time definitions 1nf hin v b hin com ho v s lo 1 2 lin v cc 5 6 8 3 4 7 100nf 15v 10f 100nf (0 v to 900 v) 10f 1nf lin ho lo v b v s 10f 15v figure 33. switching time test circuit hin lo ho lin dt dt dt dt shoot through prevent shoot through prevent figure 34. i nput / output timing diagram hin 90% 90% 10% t on 50% 50% 50% t off lin 50% 50% t off lo ho 10% t on 90% t off more than dead-time more than dead-time 10% 90% t f t r figure 35. switching time definition
? 2015 fairchild semiconductor corporation www.fairchildsemi.com FL73282 ? rev. 1.0 13 FL73282 half-bridge gate driver switching time definitions (continued) mdt= dt ho-lo - dt lo-ho lo ho 10% 90% 90% 10% t off dt ho-lo dt lo-ho hin 50% t off lin 50% 90% 10% t r t f figure 36. internal dead time definition

www. onsemi.com 1 on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. typical parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including typic als must be validated for each customer application by customers technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 www.onsemi.com literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your localsales representative ? semiconductor components industries, llc


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